NextGO Epi, a Berlin-based deeptech specialist, has announced the successful closing of a €2 million pre-seed funding round. The investment is set to fuel the development of gallium oxide (Ga2O3) epitaxial wafers, a material seen as a potential successor to traditional silicon in power semiconductor applications.
Innovation from Leibniz Institute
Spun out of the prestigious Leibniz Institute for Crystal Growth (IKZ) in 2025, NextGO Epi leverages years of research to create high-performance wafers. These components are critical for next-generation power semiconductors, which require higher efficiency and the ability to operate under extreme voltages and temperatures.
Impact on Electric Vehicles
The development of gallium oxide semiconductors is particularly relevant for the electric vehicle (EV) industry. By offering superior thermal management and energy efficiency compared to current silicon carbide or gallium nitride solutions, these wafers could lead to faster charging times and extended range for future electric transport systems.
